Ge

Diameter: up to 150mm
Length of ingot: up to 150 mm.
Orientation: <100>, <111>, <100> +6° towards <111>
Tolerance on wafers: ± 0.5 °
EPD value: from 500 to 5000/cm2.
Dopant: p-type Gallium (Ga), n-type Antimony (Sb).
Resistivity at 20 °C: from 0.002 to 45 Wcm.
Radial dispersion of resistivity: from 1 to 10 %
Axial dispersion of resistivity along ingot: from 10 to 30 %